| PART |
Description |
Maker |
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND04GX3C2A |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
http://
|
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GW3C2AN6E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory 4Gbit的，2112字节的页V供电，多级NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| IS29GL256H-70SLA IS29GL256L-70FLA IS29GL256H-70FLV |
16-word/32-byte page read buffer
|
Integrated Silicon Solu...
|
| V23814-K1306-M130 M130 V23814-K1306-MXXX V23815-K1 |
1.25 Gbit/s Rx Receiver
1.25 Gbit/s Tx Transmitter
From old datasheet system
Parallel Optical Link: PAROLI Tx AC
|
Infineon
|
